South Korea's Samsung Electronics has released CMOS imaging devices (CMOS transistors) with a pixel spacing of only 2.25μm and an aperture ratio of over 55%. The photographic portion of the component has a diagonal length of 1/2 inch (about 8 mm) and integrates about 7.2 million pixels.
In a photographic element having a pixel interval of less than 2.5 μm, the aperture ratio is generally about 25%. The higher the aperture ratio, the easier it is to increase the level of the output signal of the photographic element. It is reported that Samsung Electronics used copper wiring in the products developed this time. Prototypes using copper wiring in CMOS sensors, "2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors (CCD & AIS)", a research group composed of IBM and Kodak in the United States, June 9-11, 2005. Published at the international conference.
At the same meeting, Samsung Electronics published trial results of CMOS sensors with an aperture ratio of approximately 50% and a pixel pitch of 2.0 μm. However, it is not said whether or not the copper wiring is used, but only that the wiring width is reduced to 90 nm or 130 nm in order to increase the aperture ratio. Currently, the listing date has not been announced.
In a photographic element having a pixel interval of less than 2.5 μm, the aperture ratio is generally about 25%. The higher the aperture ratio, the easier it is to increase the level of the output signal of the photographic element. It is reported that Samsung Electronics used copper wiring in the products developed this time. Prototypes using copper wiring in CMOS sensors, "2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors (CCD & AIS)", a research group composed of IBM and Kodak in the United States, June 9-11, 2005. Published at the international conference.
At the same meeting, Samsung Electronics published trial results of CMOS sensors with an aperture ratio of approximately 50% and a pixel pitch of 2.0 μm. However, it is not said whether or not the copper wiring is used, but only that the wiring width is reduced to 90 nm or 130 nm in order to increase the aperture ratio. Currently, the listing date has not been announced.
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